 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BAV756DW switching diode features power dissipation p d : 200 mw (tamb=25 ) collector current i f: 150 ma collector-base voltage v r: 75 v operating and storage j unction temperature range t j, t stg : -55 to +150 marking:kca electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) r i r = 2.5a 75 v reverse voltage leakage current i r v r =75v v r =20v 2.5 0.025 a forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma 715 855 1000 1250 mv junction capacitance c j v r =0v f=1mhz 2 pf reveres recovery time t rr i f =i r =10ma i rr =0.1 i r r l =100 ? 4 ns sot-363 bav 756dw http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
bav 756dw http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd |
Price & Availability of BAV756DW
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |